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The IUP Journal of Electrical and Electronics Engineering:
Structural Characterization of Zn0.865Feo0.045O
Diluted Magnetic Semiconductor†
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The paper investigates the electronic structure of Zn0.865Feo0.045O Diluted Magnetic Semiconductor (DMS). The sample was prepared solid state reaction technique. The structural characterization was analyzed using Philips X’Pert X-Ray Diffraction (XRD) which is equipped with CuKa radiations. The scans were taken from scattering angle 10° to 90° with a step size of 0.02°. The results show the existence of wurtzite ZnO structure and that Fe ions take position at the Zn2+ sites.

 
 

Spin-polarized carriers can be achieved by doping the semiconducting material with low concentration of Transition Metals (TMs), i.e., Diluted Magnetic Semiconductors (DMS) (Shanker et al., 2015; and Mukherji et al., 2016). A lot of studies have been done in this regard such as II-VI: (Zn, Mn) Se, (Cd, Co) Se, (Hg, Fe) Te; IV-VI: (Sn, Mn) Te, (Pb, Mn) Te, (Pb, Eu) Te (Sun et al., 2011; Li et al., 2013; Thakare et al., 2013; Tian et al., 2013; Akilan et al., 2014; Prestgard and Tiwari, 2014; An et al., 2016; and Babu et al., 2016). Among these, ZnO is one of the most promising materials consisting of bandgap of ~3.37 eV, resistivity (~10–2 cm) and large excitation binding energy (60 meV) (Ma et al., 2012). It exhibits a wurtzite structure (P63mc) with lattice parameters a = 3.2539 A° and c = 5.2098 A° (Wongsaprom et al., 2015). It is observed that with certain appropriate doping into ZnO, a very highly conductive (3.7 × 10–3 cm) specimen with good optical transparency (~ 80-85%) and high carrier (electrons) density (1.7 × 1020 cm–3) can be synthesized (Krishna et al., 2015). However, there are several reports available in the literature on optical and electrical properties of transition metal doped ZnO (Dakhel, 2015), but still it is a decent candidate for obtaining room temperature ferromagnetism properties, which are of significant prominence in low dimensional memory devices. The present work focuses on structural characterization of Zn0.865Fe0.045O DMS.

 
 
 

Electrical and Electronics Engineering Journal, Diluted Magnetic Semiconductors (DMS), X-Ray Diffraction (XRD), ZnO, Fe