| Pub. Date | : Jul, 2019 |
|---|---|
| Product Name | : The IUP Journal of Electrical and Electronics Engineering |
| Product Type | : Article |
| Product Code | : IJEEE51907 |
| Author Name | : Preeti Saini and Sanjeev Dhull |
| Availability | : YES |
| Subject/Domain | : Management |
| Download Format | : PDF Format |
| No. of Pages | : 09 |
Recent developments in materials technology are driving the field of photovoltaic (PV) devices, especially, graphene that exhibits outstanding electronic and photonic properties. The focus here is on the incorporation of graphene layer in silicon solar cells. The optimization of the proposed structure is carried out by studying different technological and geometrical parameters such as thickness of graphene layer and its positioning in the silicon solar cells using RSoftCAD software and fullwave simulator. Graphene as hole transportation layer offers maximum power conversion efficiency of ~26%.
In the present mechanized world, the limited availability of fossil fuel has drawn the focus of the world towards renewable and environment-friendly energy resources. Among these renewable energy resources, the availability of solar energy in abundance is capable enough to fulfill the energy demand of the world. Solar photovoltaic (SPV) technology is the most appropriate and environment-friendly technique to convert the solar energy into usable form. Over the last few decades, several new SPV module technologies like CIGS and CdTe (Battersby, 2019) have been developed, but still silicon PV modules have the largest market share (Fraunhofer, 2017).
Graphene, Schottky barrier, Photovoltaic