The IUP Journal of Electrical and Electronics Engineering
Low-Voltage and Wide-Temperature Range Voltage Reference

Article Details
Pub. Date : Oct, 2019
Product Name : The IUP Journal of Electrical and Electronics Engineering
Product Type : Article
Product Code : IJEEE21910
Author Name : Gopal Agarwal and Ved Vyas Dwivedi
Availability : YES
Subject/Domain : Engineering
Download Format : PDF Format
No. of Pages : 08



The paper presents a low power and low voltage reference using the peaking current mirror circuit with MOSFETs operated in the subthreshold region. The circuit was designed and simulated using 180 nm CMOS technology MOSFET models. At minimum supply voltage of 0.5 V, the reference voltage obtained was 342.41 mV. The circuit achieved a temperature coefficient of 21 ppm/°C, supply current of 218 nA current, and power supply noise rejection ratio of –26 dB at 1 KHz.


The development of ultra low power Large-Scale Integration (LSIs) is a promising area of research in microelectronics. Such LSIs would be suitable for use in power-aware LSI applications such as portable mobile devices, implantable medical devices and smart sensor networks. These devices have to operate with ultra low power, i.e., a few microwatts or less, because they will probably be placed under conditions where they have to get the necessary energy from poor energy sources such as microbatteries or energy scavenging devices. As a step toward such LSIs, we first need to develop voltage and current reference circuits that can operate with an ultra-low current, several tens of nanoamperes or less, i.e., sub-microwatt operation.



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