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The IUP Journal of Mechanical Engineering

Breaking the Symmetry for Magnetic Reorientation with Perpendicular Magnetic Anisotropy

Article Details

Pub. Date	: May, 2023
Product Name	: The IUP Journal of Marketing Management
Product Type	: Article
Product Code	: IJMM030523
Author Name	: Ruoda Zheng, Jin-Zhao Hu, Qianchang Wang, Victor Estrada and Abdon E Sepulveda
Availability	: YES
Subject/Domain	: Marketing
Download Format	: PDF Format
No. of Pages	: 14

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Abstract

Magnetic switching with Perpendicular Magnetic Anisotropy (PMA) is a promising method for controlling magnetization in several applications such as magnetic tunnel junctions and magnetic memory. However, incoherence occurs during the PMA switching process, which reduces the switching frequency. Symmetry breaking can help solve this problem. In the study, a field-free strain-mediated method is presented with geometric asymmetry to improve the coherence and the switching speed. To demonstrate this mechanism, a finite element model of 50 nm diameter Ni nanodisk with a sloped surface on a piezoelectric thin film is built. The simulation results show a 65% faster switching speed under the same strain and energy consumption. Finally, the mechanism of symmetry breaking by investigating how film thickness affects energy profiles has also been explored.

Introduction

In the last couple of decades, considerable research has been conducted on how to switch magnetization on a nanoscale level due to its promise for applications in magnetic memory and magnetic logic. Switching magnetization has previously been achieved using current-induced Spin Transfer Torque (STT), Spin Orbit Torque (SOT) (Diao et al., 2007; Bedau et al., 2010; Rowlands et al., 2011; Brataas et al., 2012; Kanai et al., 2012; Liu et al., 2012; Shiota et al., 2012; Wang et al., 2012; Wang et al., 2013; Yu et al., 2014; and Fukami et al., 2016). However, a successful switch using these methods is usually accompanied by substantial resistive heat losses, resulting in