The paper explorers Free Space Optical (FSO) communication with its flashes and corns. FSO technology is useful where the physical connection is impractical due to high cost or other considerations, and in most cases, optical data transmission is done via optical fibers, because it allows transmission over relatively large distances without alignment issues and relatively very less disturbing influences of atmosphere. But optical data transmission using fiber has also many limitations. Some limitations are removed by FSO technology, such as it provides high data rates, low power consumption, low installation cost and easily upgradable. FSO performance parameters, i.e., internal and external parameters, and some modulation techniques used in FSO technology are also discussed.

Digital filters are used in a wide variety of signal processing applications. To improve the implementation efficiency of a digital filter, design of filters with sparse impulse response is a good solution and is currently a hot research area. Compressive sensing is an emerging signal processing technique for data acquisition, wherein a sparse signal is recovered from a highly incomplete set of measurements. The paper utilizes one of the well-known compressive sensing recovery algorithms, i.e., Orthogonal Matching Pursuit (OMP), to design a Finite Impulse Response (FIR) digital filter with sparse impulse response. Numerical example is taken to demonstrate the utility of the above-mentioned algorithm. The results demonstrate that at the cost of losing some optimality, one can design reasonably sparse FIR filters using OMP.

In this paper, a new design of 6T XOR circuits based on Carbon Nanotube Field Effect Transistor (CNTFET) technology in 32 nm technology length is proposed for evaluation. They are simulated using HSPICE, and the performance parameters such as average power, power dissipation voltage source, PDP and delay are determined. The proposed circuit is compared with 12T CMOS XOR circuit which is conventionally used and compared with CNTFET counterpart of the XOR gate. The simulation results showed that the proposed 6T XOR gate is better in performance.

CMOS technology is the most feasible semiconductor technology, but it fails to perform as per expectations beyond and at 22 nm technology node due to short channel effects. Multigate Field Effect Transistor (FET) like FinFET is the most viable substitute for MOSFETs at 22 nm and beyond. In this paper, different configurations of Static RAM (SRAM) cells (6T, 8T and 10T) are designed and implemented using FINFET technology to improve their power and speed. A 2-bit and a 4-bit SRAM are also implemented using the optimized circuit (10T) of SRAM cell. Also, a comparative study is made for various performance parameters like average power and delay. It can be concluded that the FinFET technology can effectively reduce power. Due to limited amount of power consumption, it can be used in a number of electronic devices.